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|Title:||Memristors and nonvolatile random access memory (NVRAM) in nanoelectronics|
|Other Titles:||Мемрістори та енергонезалежна оперативна пам'ять (МЕНОП) в наноелектроніці|
|Authors:||Sineglazov V. M.|
Zelenkov A. A.
Askerov Sh. I.
nonvolatile random access memory
|Abstract:||The manual is devoted to the physical principles of the memristor as a fourth fundamental element, whose existence was predicted theoretically in 1971, and in 2008 alone the memristor was realized physically. The basic characteristics and models of the memristor as the basic element of the electrical circuits, along with the resistor, inductor and capacitor are considered. The basic note is shared to the effect of the resistive switching of the memristor, its physical realization, as well as building on its base of some types of nonvolatile random access memory (NVRAM), elements of which are dimensions of the order of several nanometers, and therefore their physical realization is in the field of nanotechnology. The properties of materials to realize new approaches to the development of computers and their basic elements are just manifested in the nanoscale.|
|Appears in Collections:||Монографії, навчальні посібники кафедри авіаційних комп'ютерно-інтегрованих комплексів (НОВА)|
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|Nano_2017.pdf||Training book||20.51 MB||Adobe PDF||View/Open|
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