Please use this identifier to cite or link to this item:
https://er.nau.edu.ua/handle/NAU/32361
Title: | Memristors and nonvolatile random access memory (NVRAM) in nanoelectronics |
Authors: | SINEGLAZOV, V. M. Zelenkov, A.A. |
Keywords: | Memristor nonvolatile random access memory |
Issue Date: | 2017 |
Publisher: | Освіта України |
Abstract: | The manual is devoted to the physical principles of the memristor as a fourth fundamental element, whose existence was predicted theoretically in 1971, and in 2008 alone the memristor was realized physically. The basic characteristics and models of the memristor as the basic element of the electrical circuits, along with the resistor, inductor and capacitor are considered. The basic note is shared to the effect of the resistive switching of the memristor, its physical realization, as well as building on its base of some types of nonvolatile random access memory (NVRAM), elements of which are dimensions of the order of several nanometers, and therefore their physical realization is in the field of nanotechnology. The properties of materials to realize new approaches to the development of computers and their basic elements are just manifested in the nanoscale. |
URI: | http://er.nau.edu.ua/handle/NAU/32361 |
Appears in Collections: | Наукові праці співробітників НАУ (проводиться премодерація, колекція НТБ НАУ) |
Files in This Item:
File | Description | Size | Format | |
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НаноЭлектр-2017+(англ).pdf | 20.53 MB | Adobe PDF | View/Open |
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